N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220AB onsemi FQP6N80C

RS Stock No.:: 671-5161
Mfr. Part No.:: FQP6N80C
Brand:: onsemi

N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220AB onsemi FQP6N80C

1000 In stock - FREE next working day delivery available

Price Each (In a Pack of 5)

£1.87

(exc. VAT)

£2.24

(inc. VAT)

Units	Per unit	Per Pack*
5 - 5	£1.87	£9.35
10 - 95	£1.558	£7.79
100 - 245	£1.278	£6.39
250 - 495	£1.264	£6.32
500 +	£1.002	£5.01

*price indicative

RS Stock No.:: 671-5161
Mfr. Part No.:: FQP6N80C
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.5 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220AB
Series	QFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2.5 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	158 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	21 nC @ 10 V
Length	10.1mm
Width	4.7mm
Maximum Operating Temperature	+150 °C
Height	9.4mm
Minimum Operating Temperature	-55 °C