onsemi QFET N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-220AB FQP8N80C
- RS Stock No.:
- 145-4314
- Mfr. Part No.:
- FQP8N80C
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£74.70
(exc. VAT)
£89.65
(inc. VAT)
FREE delivery for orders over £50.00
- 950 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £1.494 | £74.70 |
100 + | £1.404 | £70.20 |
*price indicative
- RS Stock No.:
- 145-4314
- Mfr. Part No.:
- FQP8N80C
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 800 V | |
Package Type | TO-220AB | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.55 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 178 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Length | 10.1mm | |
Number of Elements per Chip | 1 | |
Width | 4.7mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 35 nC @ 10 V | |
Transistor Material | Si | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220AB | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.55 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 178 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.1mm | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 35 nC @ 10 V | ||
Transistor Material Si | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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