onsemi QFET N-Channel MOSFET, 1.5 A, 800 V, 3-Pin TO-220F FQPF2N80

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Subtotal (1 tube of 50 units)*

£62.30

(exc. VAT)

£74.75

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50£1.246£62.30
100 - 200£0.966£48.30
250 - 450£0.936£46.80
500 - 950£0.814£40.70
1000 +£0.813£40.65

*price indicative

RS Stock No.:
166-1866
Mfr. Part No.:
FQPF2N80
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

800 V

Series

QFET

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6.3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Length

10.16mm

Transistor Material

Si

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

9.19mm

Minimum Operating Temperature

-55 °C

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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