onsemi QFET N-Channel MOSFET, 19 A, 200 V, 3-Pin TO-220F FQPF19N20C
- RS Stock No.:
- 671-5247
- Mfr. Part No.:
- FQPF19N20C
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£8.34
(exc. VAT)
£10.01
(inc. VAT)
FREE delivery for orders over £50.00
- 590 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 - 5 | £1.668 | £8.34 |
10 - 95 | £1.378 | £6.89 |
100 - 245 | £1.076 | £5.38 |
250 - 495 | £1.036 | £5.18 |
500 + | £0.898 | £4.49 |
*price indicative
- RS Stock No.:
- 671-5247
- Mfr. Part No.:
- FQPF19N20C
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 19 A | |
Maximum Drain Source Voltage | 200 V | |
Series | QFET | |
Package Type | TO-220F | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 170 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 43 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Length | 10.16mm | |
Width | 4.7mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 40.5 nC @ 10 V | |
Height | 9.19mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 200 V | ||
Series QFET | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 170 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 43 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.16mm | ||
Width 4.7mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 40.5 nC @ 10 V | ||
Height 9.19mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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