onsemi QFET N-Channel MOSFET, 19 A, 200 V, 3-Pin TO-220F FQPF19N20C
- RS Stock No.:
- 145-4534
- Mfr. Part No.:
- FQPF19N20C
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£40.15
(exc. VAT)
£48.20
(inc. VAT)
FREE delivery for orders over £50.00
- 550 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.803 | £40.15 |
100 + | £0.755 | £37.75 |
*price indicative
- RS Stock No.:
- 145-4534
- Mfr. Part No.:
- FQPF19N20C
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 19 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-220F | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 170 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 43 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 40.5 nC @ 10 V | |
Width | 4.7mm | |
Number of Elements per Chip | 1 | |
Length | 10.16mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 9.19mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220F | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 170 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 43 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 40.5 nC @ 10 V | ||
Width 4.7mm | ||
Number of Elements per Chip 1 | ||
Length 10.16mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.19mm | ||
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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