onsemi QFET N-Channel MOSFET, 19 A, 200 V, 3-Pin TO-220F FQPF19N20C

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Subtotal (1 tube of 50 units)*

£40.15

(exc. VAT)

£48.20

(inc. VAT)

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50 - 50£0.803£40.15
100 +£0.755£37.75

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RS Stock No.:
145-4534
Mfr. Part No.:
FQPF19N20C
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220F

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

40.5 nC @ 10 V

Width

4.7mm

Number of Elements per Chip

1

Length

10.16mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.19mm

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Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


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