onsemi QFET N-Channel MOSFET, 9.5 A, 200 V, 3-Pin TO-220F FQPF10N20C
- RS Stock No.:
- 671-5200
- Mfr. Part No.:
- FQPF10N20C
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£6.64
(exc. VAT)
£7.97
(inc. VAT)
FREE delivery for orders over £50.00
- 295 unit(s) shipping from 10 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 5 | £1.328 | £6.64 |
10 - 95 | £1.128 | £5.64 |
100 - 245 | £0.844 | £4.22 |
250 - 495 | £0.84 | £4.20 |
500 + | £0.716 | £3.58 |
*price indicative
- RS Stock No.:
- 671-5200
- Mfr. Part No.:
- FQPF10N20C
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 9.5 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-220F | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 360 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 38 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Length | 10.16mm | |
Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
Width | 4.7mm | |
Minimum Operating Temperature | -55 °C | |
Height | 9.19mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.5 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220F | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 360 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 38 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.16mm | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Width 4.7mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.19mm | ||
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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