N-Channel MOSFET, 15.6 A, 100 V, 3-Pin DPAK onsemi FQD19N10LTM

RS Stock No.:: 145-5521
Mfr. Part No.:: FQD19N10LTM
Brand:: onsemi

N-Channel MOSFET, 15.6 A, 100 V, 3-Pin DPAK onsemi FQD19N10LTM

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Price Each (On a Reel of 2500)

£0.348

(exc. VAT)

£0.418

(inc. VAT)

Units	Per unit	Per Reel*
2500 +	£0.348	£870.00

*price indicative

RS Stock No.:: 145-5521
Mfr. Part No.:: FQD19N10LTM
Brand:: onsemi

Technical Reference

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	15.6 A
Maximum Drain Source Voltage	100 V
Series	QFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.6mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	6.1mm
Typical Gate Charge @ Vgs	14 nC @ 5 V
Height	2.3mm
Minimum Operating Temperature	-55 °C