onsemi QFET N-Channel MOSFET, 15.6 A, 100 V, 3-Pin DPAK FQD19N10LTM

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£4.82

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£5.785

(inc. VAT)

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5 - 45£0.964£4.82
50 - 95£0.832£4.16
100 - 495£0.72£3.60
500 - 995£0.634£3.17
1000 +£0.576£2.88

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Packaging Options:
RS Stock No.:
671-0970
Mfr. Part No.:
FQD19N10LTM
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

15.6 A

Maximum Drain Source Voltage

100 V

Series

QFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

14 nC @ 5 V

Height

2.3mm

Minimum Operating Temperature

-55 °C

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


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ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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