Infineon HEXFET Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC IRF8313TRPBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
165-5961
Mfr. Part No.:
IRF8313TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

21.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
TH

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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