Infineon HEXFET N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF

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RS Stock No.:
541-1180
Distrelec Article No.:
303-41-279
Mfr. Part No.:
IRF520NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.69mm

Length

10.54mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

8.77mm

Forward Diode Voltage

1.3V

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