Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4876
Mfr. Part No.:: IRF520NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£21.85

(exc. VAT)

£26.20

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

200 unit(s) ready to ship
Plus 100 unit(s) ready to ship from another location
Plus 2,000 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Tube*
50 - 50	£0.437	£21.85
100 - 200	£0.362	£18.10
250 - 450	£0.341	£17.05
500 - 1200	£0.314	£15.70
1250 +	£0.293	£14.65

*price indicative

RS Stock No.:: 919-4876
Mfr. Part No.:: IRF520NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.7A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	25nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	48W
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Standards/Approvals	No
	Height	8.77mm
	Width	4.69 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.7A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 25nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 48W
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Standards/Approvals No
	Height 8.77mm
	Width 4.69 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NPBF

This MOSFET utilises advanced HEXFET technology to provide high performance for various applications. With a continuous drain current capability of 9.7A and a maximum drain-source voltage of 100V, it is a suitable component for electronic circuits. Its enhancement mode design ensures efficient operation in diverse environments, making it a practical choice for professionals in the automation and electronics fields.

Features & Benefits

• High current capacity of 9.7A enhances performance

• Robust design ensures functionality in extreme conditions

• Low on-resistance of 200mΩ minimises power loss

• Fast switching capabilities improve efficiency

• Compatible with TO-220AB package for straightforward installation

Applications

• Power management in automation systems

• Switching in electrical circuits

• Motor drive circuits for improved efficiency

• High-frequency in electronics

How does the low on-resistance impact performance?

The low on-resistance reduces heat generation and enhances efficiency, resulting in improved overall performance in power applications by minimising energy losses.

What is the significance of the temperature range?

The wide operational temperature range ensures consistent performance in various environments, effectively accommodating both high and low temperature applications.

Can this component handle short pulses of higher current?

Yes, it can manage pulsed drain currents up to 38A, making it suitable for transient conditions in electronic circuits.

What considerations should I have when installing?

Ensure appropriate heatsinking as specified in the datasheet to manage heat dissipation effectively during operation, particularly under high load conditions.

How does the device perform under rapid switching conditions?

Its fast switching speed supports efficient operation in applications requiring quick response times, making it a versatile choice for modern electronic designs.