Infineon HEXFET N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF

RS Stock No.:: 919-4876
Mfr. Part No.:: IRF520NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£21.85

(exc. VAT)

£26.20

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

250 unit(s) ready to ship
Plus 150 unit(s) ready to ship from another location
Plus 100 unit(s) shipping from 20 November 2025

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Units	Per unit	Per Tube*
50 - 50	£0.437	£21.85
100 - 200	£0.362	£18.10
250 - 450	£0.341	£17.05
500 - 1200	£0.314	£15.70
1250 +	£0.293	£14.65

*price indicative

RS Stock No.:: 919-4876
Mfr. Part No.:: IRF520NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	9.7 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	200 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	48 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	4.69mm
	Length	10.54mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	25 nC @ 10 V
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 9.7 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 200 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 48 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Width 4.69mm
	Length 10.54mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 25 nC @ 10 V
	Height 8.77mm
	Minimum Operating Temperature -55 °C

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NPBF

This MOSFET utilises advanced HEXFET technology to provide high performance for various applications. With a continuous drain current capability of 9.7A and a maximum drain-source voltage of 100V, it is a suitable component for electronic circuits. Its enhancement mode design ensures efficient operation in diverse environments, making it a practical choice for professionals in the automation and electronics fields.

Features & Benefits

• High current capacity of 9.7A enhances performance
• Robust design ensures functionality in extreme conditions
• Low on-resistance of 200mΩ minimises power loss
• Fast switching capabilities improve efficiency
• Compatible with TO-220AB package for straightforward installation

Applications

• Power management in automation systems
• Switching in electrical circuits
• Motor drive circuits for improved efficiency
• High-frequency in electronics

How does the low on-resistance impact performance?

The low on-resistance reduces heat generation and enhances efficiency, resulting in improved overall performance in power applications by minimising energy losses.

What is the significance of the temperature range?

The wide operational temperature range ensures consistent performance in various environments, effectively accommodating both high and low temperature applications.

Can this component handle short pulses of higher current?

Yes, it can manage pulsed drain currents up to 38A, making it suitable for transient conditions in electronic circuits.

What considerations should I have when installing?

Ensure appropriate heatsinking as specified in the datasheet to manage heat dissipation effectively during operation, particularly under high load conditions.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.