Infineon HEXFET N-Channel MOSFET, 9.7 A, 100 V, 3-Pin D2PAK IRF520NSTRLPBF

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Packaging Options:
RS Stock No.:
831-2821
Mfr. Part No.:
IRF520NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

25 nC @ 10 V

Length

10.67mm

Number of Elements per Chip

1

Transistor Material

Si

Width

9.65mm

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

COO (Country of Origin):
CN

Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NSTRLPBF


This MOSFET is designed for efficient switching and amplification across various applications. Its high power handling capacity offers versatility in the fields of automation and electronics. With advanced process technology, this device ensures performance and reliability, making it suitable for operational environments. The characteristics of this MOSFET enhance circuit performance significantly.

Features & Benefits


• Low on-resistance contributes to improved energy efficiency
• High drain current rating of 9.7A supports robust performance
• Maximum drain-source voltage of 100V provides application flexibility
• Enhancement mode enables effective switching capabilities
• Surface mount design allows for compact PCB layouts

Applications


• Employed in power management systems for energy conversion
• Suitable for automation controls requiring rapid switching
• Applied in motor control circuits for precision
• Utilised in renewable energy systems such as solar inverters
• Used in audio amplifiers to enhance sound quality

What type of mounting is suitable for this device?


This component features a surface mount design, making it compatible with automated PCB assembly processes and ideal for high-density layouts.

Can it manage high temperatures during operation?


Yes, it has a maximum operating temperature of +175°C, making it apt for harsh environments without compromising performance.

Is this suitable for applications requiring fast switching?


Yes, its rapid switching speed enhances performance in applications like PWM and DC-DC converters.

What is the inductance characteristic of this device?


The internal drain inductance is typically 4.5nH, contributing to its responsive operation.

How is power dissipation handled in this MOSFET?


It allows for a maximum power dissipation of 48W, ensuring thermal stability and effective performance in various circuits.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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