Infineon HEXFET N-Channel MOSFET, 9.7 A, 100 V, 3-Pin D2PAK IRF520NSTRLPBF
- RS Stock No.:
- 831-2821
- Mfr. Part No.:
- IRF520NSTRLPBF
- Brand:
- Infineon
- RS Stock No.:
- 831-2821
- Mfr. Part No.:
- IRF520NSTRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 9.7 A | |
Maximum Drain Source Voltage | 100 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 200 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 48 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 9.65mm | |
Maximum Operating Temperature | +175 °C | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.7 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.65mm | ||
Maximum Operating Temperature +175 °C | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NSTRLPBF
Features & Benefits
• High drain current rating of 9.7A supports robust performance
• Maximum drain-source voltage of 100V provides application flexibility
• Enhancement mode enables effective switching capabilities
• Surface mount design allows for compact PCB layouts
Applications
• Suitable for automation controls requiring rapid switching
• Applied in motor control circuits for precision
• Utilised in renewable energy systems such as solar inverters
• Used in audio amplifiers to enhance sound quality
What type of mounting is suitable for this device?
Can it manage high temperatures during operation?
Is this suitable for applications requiring fast switching?
What is the inductance characteristic of this device?
How is power dissipation handled in this MOSFET?
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