Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC IRF7317TRPBF

Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

5.3 A, 6.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

46 mΩ, 98 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.7V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Width

4mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V, 19 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

1.5mm