onsemi Dual N/P-Channel MOSFET, 1.5 A, 2 A, 20 V, 6-Pin MCPH MCH6660-TL-H
- RS Stock No.:
- 791-9493
- Mfr. Part No.:
- MCH6660-TL-H
- Brand:
- onsemi
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 791-9493
- Mfr. Part No.:
- MCH6660-TL-H
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 1.5 A, 2 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | MCPH | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 136 mΩ, 266 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.3V | |
Maximum Power Dissipation | 800 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -10 V, +10 V | |
Maximum Operating Temperature | +150 °C | |
Length | 2mm | |
Typical Gate Charge @ Vgs | 1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V | |
Number of Elements per Chip | 2 | |
Width | 1.6mm | |
Transistor Material | Si | |
Height | 0.85mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1.5 A, 2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MCPH | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 136 mΩ, 266 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 800 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2mm | ||
Typical Gate Charge @ Vgs 1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V | ||
Number of Elements per Chip 2 | ||
Width 1.6mm | ||
Transistor Material Si | ||
Height 0.85mm | ||
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
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