onsemi PowerTrench Dual N/P-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 (SC-70) FDG6332C-F085

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
166-2275
Mfr. Part No.:
FDG6332C-F085
Brand:
onsemi
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Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

600 mA, 700 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363 (SC-70)

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

700 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V

Length

2mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

COO (Country of Origin):
US

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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