onsemi PowerTrench Dual P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 (SC-70) FDG6318P
- RS Stock No.:
- 166-2945
- Mfr. Part No.:
- FDG6318P
- Brand:
- onsemi
Discontinued
- RS Stock No.:
- 166-2945
- Mfr. Part No.:
- FDG6318P
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 500 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Series | PowerTrench | |
| Package Type | SOT-363 (SC-70) | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.65V | |
| Maximum Power Dissipation | 300 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 1.25mm | |
| Number of Elements per Chip | 2 | |
| Length | 2mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 0.86 nC @ 4.5 V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 500 mA | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type SOT-363 (SC-70) | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 1.25mm | ||
Number of Elements per Chip 2 | ||
Length 2mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 0.86 nC @ 4.5 V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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