Dual P-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon IRF7316TRPBF

RS Stock No.:: 165-5939
Mfr. Part No.:: IRF7316TRPBF
Brand:: Infineon

Dual P-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon IRF7316TRPBF

1000 In stock - FREE next working day delivery available

Price Each (On a Reel of 4000)

£0.327

(exc. VAT)

£0.392

(inc. VAT)

Units	Per unit	Per Reel*
4000 +	£0.327	£1,308.00

*price indicative

RS Stock No.:: 165-5939
Mfr. Part No.:: IRF7316TRPBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

Product Details

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.9 A
Maximum Drain Source Voltage	30 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	98 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	23 nC @ 10 V
Number of Elements per Chip	2
Length	5mm
Width	4mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.5mm