Infineon HEXFET Dual P-Channel MOSFET, 2.3 A, 20 V, 8-Pin SOIC IRF7104PBF

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Subtotal (1 tube of 95 units)*

£56.715

(exc. VAT)

£68.02

(inc. VAT)

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In Stock
  • 380 unit(s) ready to ship
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Units
Per unit
Per Tube*
95 - 95£0.597£56.715
190 - 380£0.484£45.98
475 - 855£0.448£42.56
950 - 2280£0.418£39.71
2375 +£0.388£36.86

*price indicative

RS Stock No.:
166-1112
Mfr. Part No.:
IRF7104PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

4mm

Typical Gate Charge @ Vgs

9.3 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

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