Infineon HEXFET Dual P-Channel MOSFET, 2.3 A, 20 V, 8-Pin SOIC IRF7104PBF

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Subtotal (1 tube of 95 units)*

£92.34

(exc. VAT)

£110.77

(inc. VAT)

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Units
Per unit
Per Tube*
95 - 95£0.972£92.34
190 - 380£0.788£74.86
475 - 855£0.729£69.26
950 - 2280£0.681£64.70
2375 +£0.632£60.04

*price indicative

RS Stock No.:
166-1112
Mfr. Part No.:
IRF7104PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

4mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

9.3 nC @ 10 V

Length

5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

P-Channel Power MOSFET 12V to 20V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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