Infineon HEXFET Dual P-Channel MOSFET, 2.3 A, 20 V, 8-Pin SOIC IRF7104PBF
- RS Stock No.:
- 166-1112
- Mfr. Part No.:
- IRF7104PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 95 units)*
£92.34
(exc. VAT)
£110.77
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 380 unit(s) ready to ship
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Units | Per unit | Per Tube* |
|---|---|---|
| 95 - 95 | £0.972 | £92.34 |
| 190 - 380 | £0.788 | £74.86 |
| 475 - 855 | £0.729 | £69.26 |
| 950 - 2280 | £0.681 | £64.70 |
| 2375 + | £0.632 | £60.04 |
*price indicative
- RS Stock No.:
- 166-1112
- Mfr. Part No.:
- IRF7104PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.3 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 400 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 4mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 9.3 nC @ 10 V | |
| Length | 5mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.3 A | ||
Maximum Drain Source Voltage 20 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 400 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 4mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 9.3 nC @ 10 V | ||
Length 5mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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