Name: Infineon HEXFET Dual P-Channel MOSFET, 2.3 A, 20 V, 8-Pin SOIC IRF7104TRPBF
Brand: Infineon
SKU: 165-5596
Price: 0.31 GBP
Availability: BackOrder

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	2.3 A
	Maximum Drain Source Voltage	20 V
	Package Type	SOIC
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	400 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-12 V, +12 V
	Number of Elements per Chip	2
	Width	4mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	9.3 nC @ 10 V
	Length	5mm
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 2.3 A
	Maximum Drain Source Voltage 20 V
	Package Type SOIC
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 400 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -12 V, +12 V
	Number of Elements per Chip 2
	Width 4mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 9.3 nC @ 10 V
	Length 5mm
	Height 1.5mm
	Minimum Operating Temperature -55 °C

Units	Per unit	Per Reel*
4000 - 4000	£0.254	£1,016.00
8000 +	£0.241	£964.00

Infineon HEXFET Dual P-Channel MOSFET, 2.3 A, 20 V, 8-Pin SOIC IRF7104TRPBF

FREE delivery for orders over £50.00

P-Channel Power MOSFET 12V to 20V, Infineon

Related links

Be the first to know about our latest products and services