Infineon HEXFET Dual N/P-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC IRF7309TRPBF

RS Stock No.:: 826-8866
Mfr. Part No.:: IRF7309TRPBF
Brand:: Infineon

Infineon HEXFET Dual N/P-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC IRF7309TRPBF

Bulk discount available

Subtotal (1 pack of 20 units)**

£10.94

(exc. VAT)

£13.12

(inc. VAT)

1860 In stock - FREE next working day delivery available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over £50.00

Check stock levels

Units	Per unit	Per Pack**
20 - 80	£0.547	£10.94
100 - 180	£0.443	£8.86
200 - 480	£0.416	£8.32
500 - 980	£0.383	£7.66
1000 +	£0.268	£5.36

**price indicative

RS Stock No.:: 826-8866
Mfr. Part No.:: IRF7309TRPBF
Brand:: Infineon

IRF7309TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	3 A, 4 A
Maximum Drain Source Voltage	30 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	80 mΩ, 160 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.4 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4mm
Typical Gate Charge @ Vgs	25 nC @ 4.5 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Height	1.5mm
Minimum Operating Temperature	-55 °C

Infineon HEXFET Dual N/P-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC IRF7309TRPBF

FREE delivery for orders over £50.00

Dual N/P-Channel Power MOSFET, Infineon

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