Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC IRF7309TRPBF

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£10.12

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£12.14

(inc. VAT)

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20 - 80£0.506£10.12
100 - 180£0.41£8.20
200 - 480£0.385£7.70
500 - 980£0.354£7.08
1000 +£0.248£4.96

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Packaging Options:
RS Stock No.:
826-8866
Mfr. Part No.:
IRF7309TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

3 A, 4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ, 160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Length

5mm

Maximum Operating Temperature

+150 °C

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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