Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC IRF7105TRPBF
- RS Stock No.:
- 826-8829
- Mfr. Part No.:
- IRF7105TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£10.44
(exc. VAT)
£12.52
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,560 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.522 | £10.44 |
| 200 - 480 | £0.496 | £9.92 |
| 500 - 980 | £0.475 | £9.50 |
| 1000 - 1980 | £0.443 | £8.86 |
| 2000 + | £0.417 | £8.34 |
*price indicative
- RS Stock No.:
- 826-8829
- Mfr. Part No.:
- IRF7105TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 2.3 A, 3.5 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 160 mΩ, 400 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V, 9.4 nC @ 10 V | |
| Length | 5mm | |
| Transistor Material | Si | |
| Width | 4mm | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2.3 A, 3.5 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 160 mΩ, 400 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V, 9.4 nC @ 10 V | ||
Length 5mm | ||
Transistor Material Si | ||
Width 4mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
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