Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC IRF9952TRPBF

RS Stock No.:: 145-9491
Mfr. Part No.:: IRF9952TRPBF
Brand:: Infineon

Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC IRF9952TRPBF

Subtotal (1 reel of 4000 units)*

£984.00

(exc. VAT)

£1,180.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

4,000 unit(s) shipping from 27 November 2025

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Units	Per unit	Per Reel*
4000 +	£0.246	£984.00

*price indicative

RS Stock No.:: 145-9491
Mfr. Part No.:: IRF9952TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N, P
	Maximum Continuous Drain Current	2.3 A, 3.5 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	150 mΩ, 400 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Length	5mm
	Typical Gate Charge @ Vgs	6.1 nC @ 10 V, 6.9 nC @ 10 V
	Transistor Material	Si
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N, P
	Maximum Continuous Drain Current 2.3 A, 3.5 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 150 mΩ, 400 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Length 5mm
	Typical Gate Charge @ Vgs 6.1 nC @ 10 V, 6.9 nC @ 10 V
	Transistor Material Si
	Height 1.5mm
	Minimum Operating Temperature -55 °C

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Infineon HEXFET Series MOSFET, 2.3A/3.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF9952TRPBF

This versatile MOSFET delivers high performance in a compact package, integrating both N-channel and P-channel configurations. It is designed for effective operation in various electronic applications, ensuring efficiency and dependability. With a maximum drain current of 3.5A and a maximum drain-source voltage of 30V, it is suitable for applications that require robust switching capabilities.

Features & Benefits

• Dual-channel configuration enhances design flexibility
• Surface mount design simplifies PCB assembly
• Low resistance (150mΩ and 400mΩ) reduces power loss
• High temperature operation (+150°C) ensures reliability in extreme conditions
• Improved gate charge characteristics enhance switching efficiency
• Isolated transistor configuration minimises cross-talk for cleaner signals

Applications

• Power management solutions
• Electric vehicle systems for improved efficiency
• Industrial automation and control
• Renewable energy systems for optimal performance
• Consumer electronics for enhanced device performance

How does the isolation of this device benefit my application?

The isolated configuration minimises interference among circuits, ensuring clean signals and preventing unwanted interactions between components.

What temperature range can this device handle during operation?

It can operate within a temperature range of -55°C to +150°C, making it suitable for extreme conditions.

Can I use this product in my surface mount PCB design?

Yes, its surface mount design allows for easy integration into PCB layouts, optimising space and enhancing thermal performance.

What factors should I consider when using this for switching applications?

Ensure the maximum gate-source voltage of ±20V is not exceeded and verify that the gate charge aligns with your switching frequency for optimal performance.

How do the specifications affect my power efficiency?

With low on-resistance and high continuous drain current, this MOSFET contributes to minimal power loss, enhancing overall energy efficiency in your circuit designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.