Dual N/P-Channel-Channel MOSFET, 4.9 A, 6.5 A, 30 V, 8-Pin SOIC Infineon IRF7319TRPBF

RS Stock No.:: 168-7931
Mfr. Part No.:: IRF7319TRPBF
Brand:: Infineon

Dual N/P-Channel-Channel MOSFET, 4.9 A, 6.5 A, 30 V, 8-Pin SOIC Infineon IRF7319TRPBF

Available to back order for despatch 22/07/2024

Price Each (On a Reel of 4000)

£0.378

(exc. VAT)

£0.454

(inc. VAT)

Units	Per unit	Per Reel*
4000 +	£0.378	£1,512.00

*price indicative

RS Stock No.:: 168-7931
Mfr. Part No.:: IRF7319TRPBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.9 A, 6.5 A
Maximum Drain Source Voltage	30 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	46 mΩ, 98 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	22 nC @ 10 V, 23 nC @ 10 V
Width	4mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	2
Length	5mm
Minimum Operating Temperature	-55 °C
Height	1.5mm