Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP IRF7509TRPBF

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£0.63

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£0.76

(inc. VAT)

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Packaging Options:
RS Stock No.:
301-192
Distrelec Article No.:
302-84-022
Mfr. Part No.:
IRF7509TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

2 A, 2.7 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

MSOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

110 mΩ, 200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

3mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V, 7.8 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

3mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

0.86mm

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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