Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP IRF7509TRPBF
- RS Stock No.:
- 301-192
- Distrelec Article No.:
- 302-84-022
- Mfr. Part No.:
- IRF7509TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£0.63
(exc. VAT)
£0.76
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1 unit(s) ready to ship
- Plus 1 unit(s) shipping from 12 September 2025
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Units | Per unit |
|---|---|
| 1 - 24 | £0.63 |
| 25 - 49 | £0.60 |
| 50 - 99 | £0.58 |
| 100 - 249 | £0.53 |
| 250 + | £0.50 |
*price indicative
- RS Stock No.:
- 301-192
- Distrelec Article No.:
- 302-84-022
- Mfr. Part No.:
- IRF7509TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 2 A, 2.7 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | MSOP | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 110 mΩ, 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 7.5 nC @ 10 V, 7.8 nC @ 10 V | |
| Width | 3mm | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Height | 0.86mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2 A, 2.7 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type MSOP | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 110 mΩ, 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 7.5 nC @ 10 V, 7.8 nC @ 10 V | ||
Width 3mm | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Height 0.86mm | ||
Minimum Operating Temperature -55 °C | ||
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