Name: Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP IRF7509TRPBF
Brand: Infineon
SKU: 166-0907
Price: 0.28 GBP
Availability: Discontinued

Specifications

Technical Reference

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Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N, P
	Maximum Continuous Drain Current	2 A, 2.7 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	MSOP
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	110 mΩ, 200 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	1.25 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	7.5 nC @ 10 V, 7.8 nC @ 10 V
	Length	3mm
	Number of Elements per Chip	2
	Transistor Material	Si
	Width	3mm
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	0.86mm

	Select all
	Brand Infineon
	Channel Type N, P
	Maximum Continuous Drain Current 2 A, 2.7 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type MSOP
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 110 mΩ, 200 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 1.25 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 7.5 nC @ 10 V, 7.8 nC @ 10 V
	Length 3mm
	Number of Elements per Chip 2
	Transistor Material Si
	Width 3mm
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 0.86mm

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP IRF7509TRPBF

Dual N/P-Channel Power MOSFET, Infineon

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