Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 2.4 A, 20 V Enhancement, 8-Pin MSOP
- RS Stock No.:
- 166-0905
- Mfr. Part No.:
- IRF7507TRPBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 166-0905
- Mfr. Part No.:
- IRF7507TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MSOP | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.40Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.2nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 3 mm | |
| Height | 0.86mm | |
| Standards/Approvals | EIA-481, EIA-541, ANSI Y14.5M-1982 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MSOP | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.40Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.2nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 3 mm | ||
Height 0.86mm | ||
Standards/Approvals EIA-481, EIA-541, ANSI Y14.5M-1982 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 2.4 A 8-Pin MSOP IRF7507TRPBF
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 2.7 A 8-Pin MSOP IRF7509TRPBF
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 3.5 A 8-Pin SOIC IRF9952TRPBF
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 6.6 A 8-Pin SOIC IRF7317TRPBF
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 7.3 A 8-Pin SOIC IRF7389TRPBF
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 55 V, 8-Pin SOIC AUIRF7343QTR
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 4 A 8-Pin SOIC IRF7309TRPBF
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 6.5 A 8-Pin SOIC IRF7319TRPBF