Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 4.9 A, 6.5 A, 30 V, 8-Pin SOIC IRF7319TRPBF
- RS Stock No.:
- 826-8879
- Mfr. Part No.:
- IRF7319TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£16.38
(exc. VAT)
£19.66
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 280 unit(s) ready to ship
- Plus 3,040 unit(s) shipping from 29 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.819 | £16.38 |
| 100 - 180 | £0.631 | £12.62 |
| 200 - 480 | £0.59 | £11.80 |
| 500 - 980 | £0.55 | £11.00 |
| 1000 + | £0.508 | £10.16 |
*price indicative
- RS Stock No.:
- 826-8879
- Mfr. Part No.:
- IRF7319TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4.9 A, 6.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 46 mΩ, 98 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V, 23 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4mm | |
| Length | 5mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.9 A, 6.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 46 mΩ, 98 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V, 23 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Length 5mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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