Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 4.9 A, 6.5 A, 30 V, 8-Pin SOIC IRF7319TRPBF
- RS Stock No.:
- 826-8879
- Mfr. Part No.:
- IRF7319TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£16.38
(exc. VAT)
£19.66
(inc. VAT)
FREE delivery for orders over £50.00
- 280 unit(s) ready to ship
- Plus 3,040 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
20 - 80 | £0.819 | £16.38 |
100 - 180 | £0.631 | £12.62 |
200 - 480 | £0.59 | £11.80 |
500 - 980 | £0.55 | £11.00 |
1000 + | £0.508 | £10.16 |
*price indicative
- RS Stock No.:
- 826-8879
- Mfr. Part No.:
- IRF7319TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 4.9 A, 6.5 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 46 mΩ, 98 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 5mm | |
Typical Gate Charge @ Vgs | 22 nC @ 10 V, 23 nC @ 10 V | |
Width | 4mm | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.9 A, 6.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 46 mΩ, 98 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V, 23 nC @ 10 V | ||
Width 4mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Dual N/P-Channel Power MOSFET, Infineon
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