Name: Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389TRPBF
Brand: Infineon
SKU: 826-8908
Price: 0.79 GBP
Availability: OutOfStock

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N, P
	Maximum Continuous Drain Current	5.3 A, 7.3 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	46 mΩ, 98 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	22 nC @ 10 V, 23 nC @ 10 V
	Length	5mm
	Number of Elements per Chip	2
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N, P
	Maximum Continuous Drain Current 5.3 A, 7.3 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 46 mΩ, 98 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 22 nC @ 10 V, 23 nC @ 10 V
	Length 5mm
	Number of Elements per Chip 2
	Height 1.5mm
	Minimum Operating Temperature -55 °C

Units	Per unit	Per Pack*
20 - 80	£0.66	£13.20
100 - 180	£0.469	£9.38
200 - 480	£0.436	£8.72
500 - 980	£0.409	£8.18
1000 +	£0.376	£7.52

Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389TRPBF

Dual N/P-Channel Power MOSFET, Infineon

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