Infineon HEXFET Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC IRF7342TRPBF
- RS Stock No.:
- 124-8750
- Mfr. Part No.:
- IRF7342TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)*
£1,536.00
(exc. VAT)
£1,844.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 19 December 2025
Units | Per unit | Per Reel* |
---|---|---|
4000 + | £0.384 | £1,536.00 |
*price indicative
- RS Stock No.:
- 124-8750
- Mfr. Part No.:
- IRF7342TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 3.4 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | SOIC | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 170 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 2 | |
Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
Length | 5mm | |
Width | 4mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.4 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 170 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Length 5mm | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
- COO (Country of Origin):
- CN
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF
Features & Benefits
• Drain-source voltage tolerance of up to 55V
• Surface mount design allows for straightforward installations
• Low maximum drain-source resistance improves energy efficiency
• Gate threshold voltage of 1 V promotes dependable switching
Applications
• Automation equipment requiring robust switching capabilities
• Suitable for motor control systems
• Used in power converters for electronics
• Common in battery management systems
What are the thermal limits for operation?
How does this component enhance circuit efficiency?
Can this MOSFET handle pulsed currents?
What type of packaging is it available in?
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