MPN

Infineon HEXFET Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC IRF7342TRPBF

RS Stock No.:: 826-8901
Mfr. Part No.:: IRF7342TRPBF
Brand:: Infineon

Infineon HEXFET Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC IRF7342TRPBF

Bulk discount available

Subtotal (1 pack of 10 units)*

£8.00

(exc. VAT)

£9.60

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

10 unit(s) ready to ship
Plus 10 unit(s) ready to ship from another location
Plus 2,140 unit(s) shipping from 08 September 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	£0.80	£8.00
100 - 240	£0.624	£6.24
250 - 490	£0.584	£5.84
500 - 990	£0.544	£5.44
1000 +	£0.504	£5.04

*price indicative

RS Stock No.:: 826-8901
Mfr. Part No.:: IRF7342TRPBF
Brand:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF

This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.

Features & Benefits

• Maximum continuous drain current of 3.4A
• Drain-source voltage tolerance of up to 55V
• Surface mount design allows for straightforward installations
• Low maximum drain-source resistance improves energy efficiency
• Gate threshold voltage of 1 V promotes dependable switching

Applications

• Power management circuits for improved energy utilisation
• Automation equipment requiring robust switching capabilities
• Suitable for motor control systems
• Used in power converters for electronics
• Common in battery management systems

What are the thermal limits for operation?

It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does this component enhance circuit efficiency?

The low Rds(on) value reduces power loss during operation, thereby enhancing overall circuit efficiency.

Can this MOSFET handle pulsed currents?

Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.

What type of packaging is it available in?

It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	3.4 A
	Maximum Drain Source Voltage	55 V
	Package Type	SOIC
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	170 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	26 nC @ 10 V
	Width	4mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Transistor Material	Si
	Length	5mm
	Minimum Operating Temperature	-55 °C
	Height	1.5mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 3.4 A
	Maximum Drain Source Voltage 55 V
	Package Type SOIC
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 170 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 26 nC @ 10 V
	Width 4mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Transistor Material Si
	Length 5mm
	Minimum Operating Temperature -55 °C
	Height 1.5mm
	Forward Diode Voltage 1.2V

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