Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF
- RS Stock No.:
- 826-8901
- Mfr. Part No.:
- IRF7342TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£8.00
(exc. VAT)
£9.60
(inc. VAT)
FREE delivery for orders over £50.00
- 180 unit(s) ready to ship
- Plus 1,760 unit(s) shipping from 23 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.80 | £8.00 |
| 100 - 240 | £0.624 | £6.24 |
| 250 - 490 | £0.584 | £5.84 |
| 500 - 990 | £0.544 | £5.44 |
| 1000 + | £0.504 | £5.04 |
*price indicative
- RS Stock No.:
- 826-8901
- Mfr. Part No.:
- IRF7342TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF
Features & Benefits
Applications
What are the thermal limits for operation?
How does this component enhance circuit efficiency?
Can this MOSFET handle pulsed currents?
What type of packaging is it available in?
Is there a specific gate voltage for optimal performance?
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