MPN

Infineon HEXFET Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC IRF7303TRPBF

RS Stock No.:: 826-8841
Mfr. Part No.:: IRF7303TRPBF
Brand:: Infineon

Infineon HEXFET Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC IRF7303TRPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

£6.94

(exc. VAT)

£8.32

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 80 unit(s) shipping from 08 September 2025
Plus 140 unit(s) shipping from 08 September 2025
Plus 2,340 unit(s) shipping from 15 September 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	£0.347	£6.94
100 - 180	£0.278	£5.56
200 - 480	£0.257	£5.14
500 - 980	£0.24	£4.80
1000 +	£0.222	£4.44

*price indicative

RS Stock No.:: 826-8841
Mfr. Part No.:: IRF7303TRPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	4.9 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	80 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Length	5mm
	Typical Gate Charge @ Vgs	25 nC @ 10 V
	Transistor Material	Si
	Width	4mm
	Height	1.5mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 4.9 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 80 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Length 5mm
	Typical Gate Charge @ Vgs 25 nC @ 10 V
	Transistor Material Si
	Width 4mm
	Height 1.5mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1V

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF

This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.

Features & Benefits

• Enhanced efficiency with a low Rds(on) of 80 mΩ
• High power dissipation capability with a maximum of 2W
• Dual-channel integration for increased functionality in designs
• Robust thermal operation up to +150°C for versatile applications
• Optimised for enhancement mode operation to improve energy management
• Compact SOIC package facilitates easy integration into modern PCBs

Applications

• Used in power supply circuits for voltage regulation
• Employed in motor control systems for efficient operation
• Suitable for lighting requiring robust switching
• Integrated into consumer electronics for improved power efficiency
• Ideal for automotive systems that require dependable performance

What is the maximum gate-source voltage for this device?

The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.

How does the Rds(on) value affect efficiency?

A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.

Can it operate at extreme temperatures?

Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.

What type of circuit boards is this compatible with?

It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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