Infineon HEXFET Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC IRF7303TRPBF

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£9.56

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Packaging Options:
RS Stock No.:
826-8841
Mfr. Part No.:
IRF7303TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.9 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Length

5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4mm

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF


This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.

Features & Benefits


• Enhanced efficiency with a low Rds(on) of 80 mΩ
• High power dissipation capability with a maximum of 2W
• Dual-channel integration for increased functionality in designs
• Robust thermal operation up to +150°C for versatile applications
• Optimised for enhancement mode operation to improve energy management
• Compact SOIC package facilitates easy integration into modern PCBs

Applications


• Used in power supply circuits for voltage regulation
• Employed in motor control systems for efficient operation
• Suitable for lighting requiring robust switching
• Integrated into consumer electronics for improved power efficiency
• Ideal for automotive systems that require dependable performance

What is the maximum gate-source voltage for this device?


The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.

How does the Rds(on) value affect efficiency?


A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.

Can it operate at extreme temperatures?


Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.

What type of circuit boards is this compatible with?


It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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