Infineon HEXFET Dual N-Channel MOSFET, 3.6 A, 80 V, 8-Pin SOIC IRF7380TRPBF

Subtotal (1 reel of 4000 units)*

£1,128.00

(exc. VAT)

£1,352.00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +£0.282£1,128.00

*price indicative

RS Stock No.:
165-5940
Mfr. Part No.:
IRF7380TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

80 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

73 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Length

5mm

Width

4mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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