Wolfspeed Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge CAS300M12BM2
- RS Stock No.:
- 162-9721
- Mfr. Part No.:
- CAS300M12BM2
- Brand:
- Wolfspeed
Subtotal (1 box of 10 units)*
£7,650.14
(exc. VAT)
£9,180.17
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Box* |
|---|---|---|
| 10 + | £765.014 | £7,650.14 |
*price indicative
- RS Stock No.:
- 162-9721
- Mfr. Part No.:
- CAS300M12BM2
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 404 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | Half Bridge | |
| Mounting Type | Screw Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 9.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 1.66 kW | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | -10 V, +25 V | |
| Width | 61.4mm | |
| Number of Elements per Chip | 2 | |
| Length | 106.4mm | |
| Typical Gate Charge @ Vgs | 1025 nC @ 20 V, 1025 nC @ 5 V | |
| Transistor Material | SiC | |
| Maximum Operating Temperature | +150 °C | |
| Height | 30mm | |
| Forward Diode Voltage | 2.5V | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 404 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type Half Bridge | ||
Mounting Type Screw Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 9.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 1.66 kW | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -10 V, +25 V | ||
Width 61.4mm | ||
Number of Elements per Chip 2 | ||
Length 106.4mm | ||
Typical Gate Charge @ Vgs 1025 nC @ 20 V, 1025 nC @ 5 V | ||
Transistor Material SiC | ||
Maximum Operating Temperature +150 °C | ||
Height 30mm | ||
Forward Diode Voltage 2.5V | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
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