STMicroelectronics SCT Type N-Channel Power MOSFET, 30 A, 1200 V Enhancement, 7-Pin HU3PAK

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£13.18

(exc. VAT)

£15.82

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 600 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£13.18
10 - 99£11.86
100 +£10.94

*price indicative

Packaging Options:
RS Stock No.:
215-242
Mfr. Part No.:
SCT070HU120G3AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Package Type

HU3PAK

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

23W

Typical Gate Charge Qg @ Vgs

37nC

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

14 mm

Height

3.5mm

Length

18.58mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

Related links