STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7
- RS Stock No.:
- 215-232
- Mfr. Part No.:
- SCT040H120G3AG
- Brand:
- STMicroelectronics
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£11.19
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£13.43
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- 975 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £11.19 |
| 10 - 99 | £10.07 |
| 100 + | £9.29 |
*price indicative
- RS Stock No.:
- 215-232
- Mfr. Part No.:
- SCT040H120G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 2.6V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Width | 10.4 mm | |
| Length | 15.25mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 2.6V | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Width 10.4 mm | ||
Length 15.25mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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