STMicroelectronics Sct N channel-Channel Power MOSFET, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- RS Stock No.:
- 719-466
- Mfr. Part No.:
- SCT018HU65G3AG
- Brand:
- STMicroelectronics
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£13.41
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£16.09
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- 300 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 4 | £13.41 |
| 5 + | £13.01 |
*price indicative
- RS Stock No.:
- 719-466
- Mfr. Part No.:
- SCT018HU65G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HU3PAK | |
| Series | Sct | |
| Mount Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 2.6V | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.6mm | |
| Width | 14.1 mm | |
| Length | 19mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HU3PAK | ||
Series Sct | ||
Mount Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 2.6V | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 175°C | ||
Height 3.6mm | ||
Width 14.1 mm | ||
Length 19mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency