STMicroelectronics STHU65N1 N channel-Channel Power MOSFET, 26 A, 650 V N, 7-Pin HU3PAK STHU65N110DM9AG
- RS Stock No.:
- 762-553
- Mfr. Part No.:
- STHU65N110DM9AG
- Brand:
- STMicroelectronics
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Units | Per unit |
|---|---|
| 1 - 9 | £2.81 |
| 10 - 24 | £2.74 |
| 25 - 99 | £2.68 |
| 100 + | £2.50 |
*price indicative
- RS Stock No.:
- 762-553
- Mfr. Part No.:
- STHU65N110DM9AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STHU65N1 | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 14.1mm | |
| Height | 0.95mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 11.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STHU65N1 | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 14.1mm | ||
Height 0.95mm | ||
Standards/Approvals AEC-Q101 | ||
Length 11.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
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