STMicroelectronics STHU65N1 N channel-Channel Power MOSFET, 26 A, 650 V N, 7-Pin HU3PAK STHU65N110DM9AG

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£4.90

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1 - 9£4.08
10 - 24£3.95
25 - 99£3.87
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RS Stock No.:
762-553
Mfr. Part No.:
STHU65N110DM9AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

650V

Series

STHU65N1

Package Type

HU3PAK

Mount Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

N

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

78nC

Maximum Operating Temperature

150°C

Standards/Approvals

AEC-Q101

Width

14.1 mm

Length

11.9mm

Height

0.95mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.

Very low FOM

Higher dv/dt capability

Excellent switching performance

100% avalanche tested

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