onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263 NTBG015N065SC1
- RS Stock No.:
- 229-6442
- Mfr. Part No.:
- NTBG015N065SC1
- Brand:
- onsemi
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Subtotal (1 unit)*
£18.80
(exc. VAT)
£22.56
(inc. VAT)
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In Stock
- 287 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £18.80 |
| 10 - 99 | £16.21 |
| 100 + | £14.05 |
*price indicative
- RS Stock No.:
- 229-6442
- Mfr. Part No.:
- NTBG015N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 4.8V | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 4.8V | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Height 9.4mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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