onsemi SiC Power Type N-Channel MOSFET, 46 A, 650 V N, 4-Pin TO-247 NTH4L060N090SC1
- RS Stock No.:
- 229-6463
- Mfr. Part No.:
- NTH4L060N090SC1
- Brand:
- onsemi
Subtotal (1 unit)*
£9.40
(exc. VAT)
£11.28
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 228 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 + | £9.40 |
*price indicative
- RS Stock No.:
- 229-6463
- Mfr. Part No.:
- NTH4L060N090SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 84mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 221W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3.9V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Width | 5.2 mm | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 84mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 221W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3.9V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Width 5.2 mm | ||
Height 22.74mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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