onsemi SiC Power Type N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247 NTH4L045N065SC1
- RS Stock No.:
- 229-6460
- Mfr. Part No.:
- NTH4L045N065SC1
- Brand:
- onsemi
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Subtotal (1 unit)*
£6.62
(exc. VAT)
£7.94
(inc. VAT)
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Temporarily out of stock
- 38 unit(s) shipping from 29 December 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £6.62 |
| 10 - 99 | £5.71 |
| 100 + | £4.95 |
*price indicative
- RS Stock No.:
- 229-6460
- Mfr. Part No.:
- NTH4L045N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 187W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Forward Voltage Vf | 4.4V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 187W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Forward Voltage Vf 4.4V | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Length 15.8mm | ||
Height 22.74mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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