STMicroelectronics N-Channel MOSFET, 75 A, 650 V HU3PAK STHU32N65DM6AG
- RS Stock No.:
- 240-0608
- Mfr. Part No.:
- STHU32N65DM6AG
- Brand:
- STMicroelectronics
Subtotal (1 reel of 600 units)*
£2,500.20
(exc. VAT)
£3,000.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
600 + | £4.167 | £2,500.20 |
*price indicative
- RS Stock No.:
- 240-0608
- Mfr. Part No.:
- STHU32N65DM6AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 75 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | HU3PAK | |
Mounting Type | Surface Mount | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type HU3PAK | ||
Mounting Type Surface Mount | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) x area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely dv/dt ruggedness
Zener-protected
Fast-recovery body diode
Lower RDS(on) x area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely dv/dt ruggedness
Zener-protected
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