Wolfspeed Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge CAS300M12BM2
- RS Stock No.:
- 916-3872
- Mfr. Part No.:
- CAS300M12BM2
- Brand:
- Wolfspeed
Subtotal (1 unit)*
£765.01
(exc. VAT)
£918.01
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 8 unit(s) ready to ship
- Plus 15 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £765.01 |
*price indicative
- RS Stock No.:
- 916-3872
- Mfr. Part No.:
- CAS300M12BM2
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 404 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | Half Bridge | |
| Mounting Type | Screw Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 9.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 1.66 kW | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | -10 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 1025 nC @ 20 V, 1025 nC @ 5 V | |
| Length | 106.4mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | SiC | |
| Width | 61.4mm | |
| Height | 30mm | |
| Forward Diode Voltage | 2.5V | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 404 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type Half Bridge | ||
Mounting Type Screw Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 9.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 1.66 kW | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -10 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1025 nC @ 20 V, 1025 nC @ 5 V | ||
Length 106.4mm | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||
Width 61.4mm | ||
Height 30mm | ||
Forward Diode Voltage 2.5V | ||
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
Related links
- Wolfspeed Dual SiC N-Channel MOSFET 1200 V, 7-Pin Half Bridge CAS300M12BM2
- Wolfspeed Dual SiC N-Channel MOSFET 1200 V, 7-Pin Half Bridge CAS120M12BM2
- Wolfspeed Dual SiC N-Channel MOSFET 1700 V, 7-Pin Half Bridge CAS300M17BM2
- Semikron Danfoss SKM200GB12E4 Dual Half Bridge IGBT Module 7-Pin SEMITRANS3, Panel Mount
- Semikron Danfoss SKM400GB066D Dual Half Bridge IGBT Module 7-Pin SEMITRANS3, Panel Mount
- Wolfspeed SiC N-Channel MOSFET 1200 V, 7-Pin D2PAK C3M0075120J
- Infineon Dual SiC N-Channel MOSFET 60 V, 7-Pin PG-TO263-7 IPF016N06NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 60 V, 7-Pin PG-TO263-7 IPF010N06NF2SATMA1