Wolfspeed Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge CAS120M12BM2

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Subtotal (1 box of 10 units)*

£4,295.06

(exc. VAT)

£5,154.07

(inc. VAT)

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  • 10 unit(s) shipping from 31 October 2025
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10 +£429.506£4,295.06

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RS Stock No.:
162-9720
Mfr. Part No.:
CAS120M12BM2
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

193 A

Maximum Drain Source Voltage

1200 V

Package Type

Half Bridge

Mounting Type

Screw Mount

Pin Count

7

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

925 W

Transistor Configuration

Series

Maximum Gate Source Voltage

-10 V, +25 V

Length

106.4mm

Number of Elements per Chip

2

Width

61.4mm

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Typical Gate Charge @ Vgs

378 nC @ 20 V

Forward Diode Voltage

2.4V

Minimum Operating Temperature

-40 °C

Height

30mm

COO (Country of Origin):
CN

Wolfspeed Silicon Carbide Power MOSFET Modules


Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements


MOSFET Transistors, Wolfspeed

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