onsemi PowerTrench N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06
- RS Stock No.:
- 806-3541
- Mfr. Part No.:
- FDP030N06
- Brand:
- onsemi
Subtotal (1 pack of 2 units)*
£2.82
(exc. VAT)
£3.38
(inc. VAT)
FREE delivery for orders over £50.00
- Final 786 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 + | £1.41 | £2.82 |
*price indicative
- RS Stock No.:
- 806-3541
- Mfr. Part No.:
- FDP030N06
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 120 A, 193 A | |
Maximum Drain Source Voltage | 60 V | |
Series | PowerTrench | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3.2 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 231 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.7mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 10.1mm | |
Typical Gate Charge @ Vgs | 116 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 15.38mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A, 193 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.2 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 231 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.7mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.1mm | ||
Typical Gate Charge @ Vgs 116 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 15.38mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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