onsemi PowerTrench N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 FDP5800
- RS Stock No.:
- 759-9178
- Mfr. Part No.:
- FDP5800
- Brand:
- onsemi
Subtotal (1 pack of 2 units)*
£4.49
(exc. VAT)
£5.388
(inc. VAT)
FREE delivery for orders over £50.00
- 382 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £2.245 | £4.49 |
20 + | £1.935 | £3.87 |
*price indicative
- RS Stock No.:
- 759-9178
- Mfr. Part No.:
- FDP5800
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 60 V | |
Series | PowerTrench | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 7.2 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 242 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.5mm | |
Typical Gate Charge @ Vgs | 112 nC @ 10 V | |
Length | 9.9mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 15.7mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.2 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 242 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.5mm | ||
Typical Gate Charge @ Vgs 112 nC @ 10 V | ||
Length 9.9mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 15.7mm | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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