onsemi PowerTrench N-Channel MOSFET, 80 A, 40 V, 8-Pin Power 33 FDMC8360L
- RS Stock No.:
- 864-8212
- Mfr. Part No.:
- FDMC8360L
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.65
(exc. VAT)
£10.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,995 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.73 | £8.65 |
| 50 - 95 | £1.492 | £7.46 |
| 100 - 495 | £1.292 | £6.46 |
| 500 - 995 | £1.136 | £5.68 |
| 1000 + | £1.034 | £5.17 |
*price indicative
- RS Stock No.:
- 864-8212
- Mfr. Part No.:
- FDMC8360L
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | Power 33 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2.9 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 54 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 57 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type Power 33 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.9 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 54 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.4mm | ||
Length 3.4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 57 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
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