onsemi PowerTrench N-Channel MOSFET, 76 A, 80 V, 8-Pin PQFN8 FDMS86300DC
- RS Stock No.:
- 166-1765
- Mfr. Part No.:
- FDMS86300DC
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£3,276.00
(exc. VAT)
£3,930.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 19 December 2025
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £1.092 | £3,276.00 |
*price indicative
- RS Stock No.:
- 166-1765
- Mfr. Part No.:
- FDMS86300DC
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 76 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | PQFN8 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 5 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
Length | 5.1mm | |
Width | 5.85mm | |
Height | 1.05mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 76 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PQFN8 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Length 5.1mm | ||
Width 5.85mm | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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