onsemi PowerTrench N-Channel MOSFET, 130 A, 80 V, 8-Pin PQFN8 FDMS86350
- RS Stock No.:
- 166-2155
- Mfr. Part No.:
- FDMS86350
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£3,432.00
(exc. VAT)
£4,119.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 08 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £1.144 | £3,432.00 |
*price indicative
- RS Stock No.:
- 166-2155
- Mfr. Part No.:
- FDMS86350
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 130 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | PowerTrench | |
| Package Type | PQFN8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.8 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 5.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.25mm | |
| Transistor Material | Si | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 80 V | ||
Series PowerTrench | ||
Package Type PQFN8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.8 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 110 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 5.1mm | ||
Maximum Operating Temperature +150 °C | ||
Width 6.25mm | ||
Transistor Material Si | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
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