onsemi PowerTrench N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200
- RS Stock No.:
- 739-4850
- Mfr. Part No.:
- FDMS86200
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
£1.80
(exc. VAT)
£2.16
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2 unit(s) ready to ship from another location
- Plus 2,094 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £1.80 |
| 10 - 99 | £1.55 |
| 100 - 499 | £1.35 |
| 500 - 999 | £1.18 |
| 1000 + | £1.08 |
*price indicative
- RS Stock No.:
- 739-4850
- Mfr. Part No.:
- FDMS86200
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | PQFN8 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 34 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6mm | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type PQFN8 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6mm | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
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