onsemi PowerTrench N-Channel MOSFET, 76 A, 80 V, 8-Pin PQFN8 FDMS86300DC
- RS Stock No.:
- 772-9206
- Mfr. Part No.:
- FDMS86300DC
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 3 units)*
£5.589
(exc. VAT)
£6.708
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,385 unit(s) ready to ship
- Plus 999,997,614 unit(s) shipping from 21 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 3 - 9 | £1.863 | £5.589 |
| 12 - 99 | £1.563 | £4.689 |
| 102 - 249 | £1.253 | £3.759 |
| 252 - 498 | £1.21 | £3.63 |
| 501 + | £1.053 | £3.159 |
*price indicative
- RS Stock No.:
- 772-9206
- Mfr. Part No.:
- FDMS86300DC
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 76 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PQFN8 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 5.85mm | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 76 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PQFN8 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5.85mm | ||
Length 5.1mm | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
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